InGaN islands and thin films grown on epitaxial graphene

C Paillet (1, 2) , S. Vézian (2) , C. Matei (1) , A. Michon (2) , B. Damilano (2) , A. Dussaigne (1) , B Hyot (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

In this work is studied the growth of InGaN on epitaxial graphene by molecular beam epitaxy. The nucleation of the alloy follows a three-dimensional (3D) growth mode, in the explored temperature range of 515-765°C, leading to the formation of dendrite-like islands. Careful Raman scattering experiments show that the graphene underneath is not degraded by the InGaN growth. Moreover, lateral displacement of the nuclei during an atomic force microscopy scan demonstrate weak bonding interactions between InGaN and graphene. Finally, a longer growth time of the alloy gives rise to a compact thin film in partial epitaxial relationship with the SiC underneath the graphene.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

C Paillet, S. Vézian, C. Matei, A. Michon, B. Damilano, et al.. InGaN islands and thin films grown on epitaxial graphene. Nanotechnology, 2020, 31 (40), pp.405601. ⟨10.1088/1361-6528/ab98bd⟩. ⟨hal-03024853⟩